Division of Physics and Technology of Wide-Band-Gap Semiconductor Nanostructures

Main subjects of research:

• Energy transfer, radiative and nonradiative recombination processes in bulk and thin films materials
• Physics of spin interactions in semimagnetic semiconductors and layers
• Energy structure and recombination processes of deep-level defects in semiconductors and insulators
• Growth and characterization of bulk and epitaxial II-VI and III-V compounds
• Band structure and surface studies by photoemission spectroscopy
• High-temperature superconductivity
• Theory of disordered systems

Materials studied:

• A^IIIB^V compounds (epitaxial GaAlAs/GaAs, bulk InP, GaSb, InAsP - pure and doped)
• Thin layers of A^IIB^IV compounds (including semimagnetic semiconductors, mostly doped)
• Czochralski grown Si - RE implanted
• High temperature superconductors - thin films